s1flb-m, s1fld-m, s1flg-m, S1FLJ-M, s1flk-m, s1flm-m www.vishay.com vishay semiconductors rev.1.0, 26-aug-13 1 document number: 82453 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 standard recovery rectifier, high voltage surface mount mechanical data case: do-219ab (smf) polarity: band denotes cathode end weight: approx. 15 mg packaging codes/options: ? 18/10k per 13" reel (8 mm tape), 50k/box ? 08/3k per 7" reel (8 mm tape), 30k/box int. construction: single features ? for surface mounted applications ? low profile package ? ideal for automated placement ? glass passivated ? high temperature soldering: 260 c/10 s at terminals ? wave and reflow solderable ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ? ? ? ? ? ? note (1) averaged over any 20 ms periode 17249 parts table part ordering code marking remarks s1flb-m s1flb-m-18 or s1flb-m-08 hb tape and reel s1fld-m s1fld-m-18 or s1fld-m-08 hd tape and reel s1flg-m s1flg-m-18 or s1f lg-m-08 hg tape and reel S1FLJ-M S1FLJ-M-18 or S1FLJ-M-08 hj tape and reel s1flk-m s1flk-m-18 or s1flk-m-08 hk tape and reel s1flm-m s1flm-m-18 or s1flm-m-08 hm tape and reel absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit maximum repetitive pe ak reverse voltage s1flb-m v rrm 100 v s1fld-m v rrm 200 v s1flg-m v rrm 400 v S1FLJ-M v rrm 600 v s1flk-m v rrm 800 v s1flm-m v rrm 1000 v maximum rms voltage s1flb-m v rms 70 v s1fld-m v rms 140 v s1flg-m v rms 280 v S1FLJ-M v rms 420 v s1flk-m v rms 560 v s1flm-m v rms 700 v maximum dc blocking voltage s1flb-m v dc 100 v s1fld-m v dc 200 v s1flg-m v dc 400 v S1FLJ-M v dc 600 v s1flk-m v dc 800 v s1flm-m v dc 1000 v maximum average forward rectified current t tp = 75 c (1) i f(av) 1.5 a t a = 25 c (1) at r thja < 110 k/w i f(av) 1a t a = 65 c (1) i f(av) 0.7 a peak forward surge curren t 8.3 ms half sine-wave t l = 25 c i fsm 22 a
s1flb-m, s1fld-m, s1flg-m, S1FLJ-M, s1flk-m, s1flm-m www.vishay.com vishay semiconductors rev.1.0, 26-aug-13 2 document number: 82453 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) mounted on epoxy substrate with 3 mm x 3 mm cu pads ( ? 40 m thick) ? note (1) pulse test: 300 s pulse width, 1 % duty cycle ? ? thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air (1) r thja 180 k/w operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit instaneous forward voltage 1 a (1) s1flb-m v f 1.1 v s1fld-m v f 1.1 v s1flg-m v f 1.1 v S1FLJ-M v f 1.1 v s1flk-m v f 1.1 v s1flm-m v f 1.1 v maximum dc reverse current at rated dc blocking voltage t a = 25 c s1flb-m i r 10 a s1fld-m i r 10 a s1flg-m i r 10 a S1FLJ-M i r 10 a s1flk-m i r 10 a s1flm-m i r 10 a t a = 125 c s1flb-m i r 50 a s1fld-m i r 50 a s1flg-m i r 50 a S1FLJ-M i r 50 a s1flk-m i r 50 a s1flm-m i r 50 a reverse recovery time i f = 0.5 a, i r = 1 a, i rr = 0.25 a s1flb-m t rr 1800 ns s1fld-m t rr 1800 ns s1flg-m t rr 1800 ns S1FLJ-M t rr 1800 ns s1flk-m t rr 1800 ns s1flm-m t rr 1800 ns typical capacitance 4 v, 1 mhz s1flb-m c j 4pf s1fld-m c j 4pf s1flg-m c j 4pf S1FLJ-M c j 4pf s1flk-m c j 4pf s1flm-m c j 4pf
s1flb-m, s1fld-m, s1flg-m, S1FLJ-M, s1flk-m, s1flm-m www.vishay.com vishay semiconductors rev.1.0, 26-aug-13 3 document number: 82453 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward current derating curve fig. 2 - typical instantaneous forward characteristics fig. 3 - typical instantaneous re verse characteristics fig. 4 - capacitance vs. reverse voltage 0 0.6 0.8 1.2 1.0 0 20 40 60 80 100 120 140 160 a v erage for w ard c u rrent (a) ambient temperat u re (c) 0.4 0.2 resisti v e or ind u cti v e load 3.0 mm x 3.0 mm 40 m thick copper pad areas 17375 100 1000 600 700 800 900 1000 1100 instantaneo u s for w ard c u rrent (ma) in s tantaneou s forward voltage (mv) t j = 150 c t j = 25 c t j = 100 c 17376 instantaneo u sre v erse c u rrent (a) instantaneo u sre v erse v oltage ( v ) 0 100 200 300 400 500 600 700 800 900 0.01 0.1 10 1 100 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 17377 v r ( v ) c (pf) 0 5 10 15 20 25 30 35 40 10 9 8 7 6 5 4 3 2 1 0 17378
s1flb-m, s1fld-m, s1flg-m, S1FLJ-M, s1flk-m, s1flm-m www.vishay.com vishay semiconductors rev.1.0, 26-aug-13 4 document number: 82453 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): do-219ab (smf) foot print re commendation: re v . 3 - date: 13. march 2007 doc u ment no.:s8- v -3915.01-001 (4) 1.3 (0.051) 1.3 (0.051) 2.9 (0.114) 1.4 (0.055) 2.9 (0.114) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) 0.85 (0.033) 0.35 (0.014) 1.2 (0.047) 0.8 (0.031) 1.9 (0.075) 1.7 (0.067) 1.08 (0.043) 0.88 (0.035) 0.25 (0.010) 0.1(0.003) 0.1 (0.004) 0 (0.000) 5 5 created - date: 15. febr u ary 2005 17247 detail z enlarged
s1flb-m, s1fld-m, s1flg-m, S1FLJ-M, s1flk-m, s1flm-m www.vishay.com vishay semiconductors rev.1.0, 26-aug-13 5 document number: 82453 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 blistertape dimensions in millimeters: do-219 ab (smf) 18513 ps doc u ment-no.: s8- v -3717.02-001 (3)
s1flb-m, s1fld-m, s1flg-m, S1FLJ-M, s1flk-m, s1flm-m www.vishay.com vishay semiconductors rev.1.0, 26-aug-13 6 document number: 82453 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 orientation in carrier tape - smf smf top view cathode unreeling direction 22670 document no.: s8-v-3717.02-003 (4) created - date: 09. feb. 2010
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